BSC016N03MSG BSC016N03MSG is a 30V N-Channel OptiMOS 3 M-Series Power MOSFET from Infineon Technologies. It offers 225A continuous drain current and ultra-low 1.6mΩ on-resistance at 10V gate drive.
Mfr Part #:

BSC016N03MSG

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BSC016N03MSG is a 30V N-Channel OptiMOS 3 M-Series Power MOSFET from Infineon Technologies. It offers 225A continuous drain current and ultra-low 1.6mΩ on-resistance at 10V gate drive.
✓ Total Stock: 41,343 pcs

BSC016N03MSG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
41,000 pcs
41000 pcs On Request 1 On Request On Request 0745+/0720 On Request On Request
Non-Authorised Inventory information
343 pcs
343 pcs On Request 1 On Request On Request 1203+ On Request On Request

BSC016N03MSG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC016N03MSG Description

Short technical summary and product information.

The BSC016N03MSG is a 30V N-Channel Power MOSFET from Infineon Technologies, part of the OptiMOS 3 M-Series. It is designed for high-efficiency power conversion with very low on-resistance (1.6 mΩ typical at 10V, 2 mΩ at 4.5V) and low gate charge (173 nC total). This MOSFET is optimized for 5V gate drive applications, making it suitable for notebook, VGA, and point-of-load (POL) converters. The device is 100% avalanche tested and can handle continuous drain current up to 225A at 25°C case temperature (142A at 100°C) and pulsed current up to 900A. The maximum power dissipation is 125W at case temperature 25°C. The BSC016N03MSG is housed in a PG-TDSON-8 (SuperSO8) surface-mount package, which provides excellent thermal performance. It is RoHS compliant and halogen-free according to IEC61249-2-21.

BSC016N03MSG Quick Information

Product Type: Power MOSFET
Series: OptiMOS 3M
Canonical Name: BSC016N03MSG N-Channel Power MOSFET
Subcategory: Single

BSC016N03MSG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC016N03MSG Features

  • 30V drain-source voltage rating.
  • 225A continuous drain current capability.
  • Ultra-low 1.6mΩ on-resistance at 10V.
  • Optimized for 5V gate drive applications.
  • RoHS and halogen-free compliant.

BSC016N03MSG Applications

  • Ideal for notebook and VGA power stages.
  • Used in point-of-load (POL) converters.
  • Suitable for high-frequency SMPS designs.
  • Applicable to automotive and industrial systems.

BSC016N03MSG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30 V.

What package is the BSC016N03MSG available in?

PG-TDSON-8 (SuperSO8) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the BSC016N03MSG RoHS compliant?

Yes, RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the on-resistance at 10V gate drive?

1.6 mΩ maximum.

What is the continuous drain current at 25°C?

225 A maximum at case temperature 25°C with VGS=10V.

What is the total gate charge?

173 nC maximum at VGS=10V.

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