| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,670 pcs
|
28670 pcs | On Request | 1 | On Request | On Request | 0843+ | On Request | On Request | |
|
2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
374 pcs
|
374 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC016N03LSG is an N-Channel enhancement mode MOSFET from Infineon Technologies, built with MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications.
Key electrical specifications include a maximum drain-source voltage of 30 V and a continuous drain current of 100 A at case temperature (Tc). The device features a very low on-resistance of 1.6 mΩ maximum at 30 A and 10 V gate drive, enabling high current handling with minimal conduction losses. Gate charge is 131 nC maximum at 10 V, and input capacitance is 10000 pF at 15 V drain-source.
The MOSFET is housed in an 8-PowerTDFN surface-mount package (PG-TDSON-8-1) and supports an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 125 W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.71 | $2.71 |
| 10+ | $1.74 | $1.74 |
| 100+ | $1.19 | $1.19 |
| 500+ | $1.01 | $1.01 |
| 1,000+ | $0.89 | $0.89 |
| 2,500+ | $0.84 | $0.84 |
| 5,000+ | $0.81 | $0.81 |
| 10,000+ | $0.81 | $0.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30 V.
The maximum drain current is 32 A at ambient temperature (Ta) and 100 A at case temperature (Tc).
The maximum on-resistance (Rds On) is 1.6 mΩ at a drain current of 30 A and gate-source voltage of 10 V.
The operating junction temperature range is -55°C to 150°C.
It comes in an 8-PowerTDFN surface-mount package, with a supplier device package of PG-TDSON-8-1.
The part is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.