BSC014NE2LSIATMA1 Infineon BSC014NE2LSI is an N-Channel OptiMOS power MOSFET rated for 25V drain-source voltage and 33A continuous drain current at ambient temperature.
Mfr Part #:

BSC014NE2LSIATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BSC014NE2LSI is an N-Channel OptiMOS power MOSFET rated for 25V drain-source voltage and 33A continuous drain current at ambient temperature.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.61 - $2.00

BSC014NE2LSIATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC014NE2LSIATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC014NE2LSIATMA1 Description

Short technical summary and product information.

The Infineon BSC014NE2LSI is an N-Channel enhancement mode power MOSFET built on OptiMOS technology. It is designed for high-performance DC-DC conversion, particularly synchronous buck converters. Key electrical ratings include a maximum drain-source voltage of 25V, continuous drain current of 33A at 25°C ambient (100A at case temperature), and a very low typical on-resistance of 1.4 mOhm at 10V gate drive. The device features a monolithic integrated Schottky-like diode and is 100% avalanche tested, with a maximum single-pulse avalanche energy rating of 50 mJ. It is housed in a surface-mount SuperSO8 package (PG-TDSON-8-7) and is qualified according to JEDEC standards. The BSC014NE2LSI is RoHS compliant and halogen-free, making it suitable for environmentally sensitive designs.

BSC014NE2LSIATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS
Canonical Name: Infineon BSC014NE2LSI N-Channel OptiMOS Power MOSFET
Subcategory: Single MOSFET

BSC014NE2LSIATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

BSC014NE2LSIATMA1 Estimated Pricing

Qty Low High
1+ $2.00 $2.00
10+ $1.28 $1.28
100+ $0.86 $0.86
500+ $0.68 $0.68
1,000+ $0.65 $0.65
2,500+ $0.64 $0.64
5,000+ $0.61 $0.61

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC014NE2LSIATMA1 Features

  • N-Channel OptiMOS power MOSFET design.
  • Very low 1.4 mOhm on-resistance at 10V.
  • Rated for 25V drain-source voltage maximum.
  • 100% avalanche tested for ruggedness.
  • RoHS compliant and halogen-free package.

BSC014NE2LSIATMA1 Applications

  • Ideal for high-performance buck converters.
  • Suitable for DC-DC power supply modules.
  • Used in notebook and desktop voltage regulators.
  • Applicable for load switch and battery protection.

BSC014NE2LSIATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSC014NE2LSI?

The maximum drain-source voltage (Vds) is 25 V.

What is the continuous drain current rating at ambient temperature?

The continuous drain current (Id) is 33 A at Ta=25°C.

What is the typical on-resistance of this MOSFET?

The maximum drain-source on-resistance (Rds(on)) is 1.4 mOhm at Id=30A and Vgs=10V.

What package type is the BSC014NE2LSI available in?

It is available in a surface-mount SuperSO8 package, also designated as 8-PowerTDFN or PG-TDSON-8-7.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

Is the BSC014NE2LSI RoHS compliant?

Yes, it is RoHS3 compliant and has Pb-free lead plating.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (Vgs) is ±20V.

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