| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,383 pcs
|
37383 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSC014NE2LSI is an N-channel OptiMOSTM Power MOSFET designed for high-performance buck converters. It features a 25V drain-source voltage and a very low on-resistance of 1.4 mΩ maximum when VGS is 4.5V.
This MOSFET is optimized for efficiency and offers a continuous drain current of up to 179A at 25°C case temperature with a 10V gate-source voltage. It also includes a monolithic integrated Schottky-like diode and is 100% avalanche tested for reliability.
The BSC014NE2LSI comes in a PG-TDSON-8 package suitable for surface mounting. It is Pb-free and halogen-free, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC014NE2LSI is 25V.
The maximum on-resistance (RDS(on)) is 1.4 mΩ when the gate-source voltage (VGS) is 4.5V.
The continuous drain current (ID) is rated up to 179A at a case temperature of 25°C with a gate-source voltage of 10V.
The BSC014NE2LSI is supplied in the PG-TDSON-8 package.
Yes, the BSC014NE2LSI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC014NE2LSI is 1.