BSC014N06NSATMA1 The BSC014N06NSATMA1 is a 60V N-Channel MOSFET from Infineon, featuring 257A continuous drain current and 1.45mΩ max on-resistance.
Mfr Part #:

BSC014N06NSATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BSC014N06NSATMA1 is a 60V N-Channel MOSFET from Infineon, featuring 257A continuous drain current and 1.45mΩ max on-resistance.
✓ Total Stock: 71,020 pcs
$ Price Range: $1.19 - $3.28

BSC014N06NSATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC014N06NSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC014N06NSATMA1 Description

Short technical summary and product information.

The BSC014N06NSATMA1 is an N-Channel power MOSFET from Infineon Technologies, part of the OptiMOS family. It is designed for high-performance switch-mode power supplies, including synchronous rectification. The device is rated for a maximum drain-source voltage of 60V and supports a continuous drain current of 257A at Tc=25°C, with a pulsed current rating of 1028A.

 

Key electrical characteristics include a maximum RDS(on) of 1.45mΩ at Vgs=10V and Id=50A, a typical total gate charge of 100nC, and a maximum input capacitance of 6500pF at Vds=30V. The device is 100% avalanche tested and rated for 175°C junction temperature, enabling robust operation in demanding industrial environments.

 

The BSC014N06NSATMA1 comes in a PG-TDSON-8 (SuperSO8) surface-mount package, also known as 8-PowerTDFN, with a supplier device package of PG-TDSON-8-17. It is RoHS compliant, halogen-free per IEC61249-2-21, and has Pb-free lead plating. The source pins (1-3) are enlarged to improve solder joint reliability.

 

This MOSFET is suitable for applications such as high-power density DC-DC converters, synchronous rectification stages, and motor control circuits. Its low on-resistance and fast switching characteristics help reduce power losses and improve efficiency.

BSC014N06NSATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS
Canonical Name: Infineon OptiMOS N-Channel 60V Power MOSFET
Subcategory: Single MOSFET

BSC014N06NSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC014N06NSATMA1 Estimated Pricing

Qty Low High
1+ $3.28 $3.28
10+ $2.13 $2.13
100+ $1.47 $1.47
500+ $1.32 $1.32
5,000+ $1.20 $1.20
10,000+ $1.19 $1.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC014N06NSATMA1 Features

  • Rated for 60V drain-source voltage.
  • Handles 257A continuous drain current.
  • Ultra-low 1.45mΩ on-resistance.
  • Low 100nC typical gate charge.
  • RoHS compliant and halogen-free.

BSC014N06NSATMA1 Applications

  • Used in synchronous rectification circuits.
  • Ideal for high-power DC-DC converters.
  • Suitable for motor control systems.
  • Works in industrial SMPS designs.

BSC014N06NSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSC014N06NSATMA1?

The maximum drain-source voltage is 60V.

What package is the BSC014N06NSATMA1 available in?

It is available in a PG-TDSON-8 (SuperSO8) surface-mount package, also known as 8-PowerTDFN, with supplier device package PG-TDSON-8-17.

What is the operating junction temperature range?

The datasheet specifies operation from -55°C to 175°C junction temperature.

Is the BSC014N06NSATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and also halogen-free according to IEC61249-2-21.

What is the continuous drain current rating?

The continuous drain current is 257A at Tc=25°C and 182A at Tc=100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.45mΩ at Vgs=10V and Id=50A.

What is the total gate charge?

The typical total gate charge is 100nC, and the maximum gate charge at Vgs=10V is 89nC.

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