BSC014N04LSIATMA1 N-Channel Power MOSFET from Infineon, rated for 40V drain-source voltage and 195A continuous drain current. Features very low on-resistance of 1.45mΩ and is optimized for synchronous rectification.
Mfr Part #:

BSC014N04LSIATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET from Infineon, rated for 40V drain-source voltage and 195A continuous drain current. Features very low on-resistance of 1.45mΩ and is optimized for synchronous rectification.
✓ Total Stock: 4,009 pcs
$ Price Range: $0.76 - $1.83

BSC014N04LSIATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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BSC014N04LSIATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC014N04LSIATMA1 Description

Short technical summary and product information.

The BSC014N04LSIATMA1 is an N-channel logic level power MOSFET from Infineon's OptiMOS family, designed for high efficiency synchronous rectification. Key electrical specifications include a maximum drain-source voltage of 40V, continuous drain current of 195A at Tc=25°C with VGS=10V, and an ultra-low on-resistance of 1.45mΩ maximum at Id=50A, VGS=10V. The device features a gate charge of 55nC and input capacitance of 4000pF, enabling fast switching. It is 100% avalanche tested with a maximum avalanche energy of 90mJ.

 

Packaged in a TDSON-8 FL surface mount package (PG-TDSON-8 FL), the MOSFET supports an operating junction temperature range of -55°C to 150°C. It is RoHS3 compliant and halogen-free per IEC61249-2-21. The integrated monolithic Schottky-like diode further enhances performance in rectification applications.

 

This MOSFET is suitable for high-current DC-DC converters, battery management systems, and motor control circuits where low conduction and switching losses are critical.

BSC014N04LSIATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS
Canonical Name: Infineon BSC014N04LSIATMA1 N-Channel 40V MOSFET
Subcategory: N-Channel MOSFET

BSC014N04LSIATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC014N04LSIATMA1 Estimated Pricing

Qty Low High
1+ $1.83 $1.83
10+ $1.16 $1.16
100+ $0.78 $0.78
500+ $0.76 $0.76
5,000+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC014N04LSIATMA1 Features

  • Optimized for synchronous rectification applications.
  • Very low on-resistance of 1.45 mΩ.
  • 100% avalanche tested for reliability.
  • Logic level gate drive (4.5V, 10V).
  • Halogen-free and RoHS compliant.

BSC014N04LSIATMA1 Applications

  • Ideal for synchronous rectification in power supplies.
  • Used in high-current DC-DC converters.
  • Suitable for battery management systems.
  • Applicable in motor control circuits.

BSC014N04LSIATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

40 V.

What is the continuous drain current?

195 A at Tc=25°C with VGS=10V.

What is the on-resistance?

1.45 mΩ maximum at Id=50A, VGS=10V.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is this MOSFET available in?

TDSON-8 FL (PG-TDSON-8 FL).

Is this component RoHS compliant?

Yes, RoHS3 compliant and halogen-free per IEC61249-2-21.

What is the gate charge?

55 nC maximum at VGS=10V.

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