BSC014N04LSATMA1 N-Channel 40V OptiMOS Power MOSFET with 205A continuous drain current and 1.4mΩ typical on-resistance. Surface mount in SuperSO8 (PG-TDSON-8) package.
Mfr Part #:

BSC014N04LSATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 40V OptiMOS Power MOSFET with 205A continuous drain current and 1.4mΩ typical on-resistance. Surface mount in SuperSO8 (PG-TDSON-8) package.
✓ Total Stock: 16,020 pcs
$ Price Range: $0.49 - $1.86

BSC014N04LSATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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16,020 pcs
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BSC014N04LSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC014N04LSATMA1 Description

Short technical summary and product information.

The BSC014N04LSATMA1 is an N-Channel Enhancement Mode Power MOSFET from Infineon Technologies, part of the OptiMOS family. It is designed for a maximum drain-source voltage of 40 V and can deliver a continuous drain current of up to 205 A at Tc=25°C with Vgs=10V. The device features a very low typical on-resistance of 1.4 mΩ at Vgs=10V, enabling high efficiency in power conversion applications.

 

This MOSFET supports a gate drive voltage range of 4.5V to 10V, allowing logic-level control. The total gate charge is 61 nC at Vgs=10V, and the input capacitance is 4300 pF at Vds=20V. The device is avalanche rated with a single pulse avalanche current of 50 A. It is housed in a surface-mount PG-TDSON-8 package (also known as SuperSO8 or 8-PowerTDFN) with a package marking of 014N04LS.

 

The operating junction temperature range is -55°C to +150°C. The MOSFET is RoHS compliant and halogen-free according to IEC 61249-2-21. It is intended for applications such as synchronous rectification and other high-current switching circuits.

BSC014N04LSATMA1 Quick Information

Product Type: MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor)
Series: OptiMOS
Canonical Name: BSC014N04LSATMA1 – N-Channel 40V OptiMOS Power MOSFET
Subcategory: N-Channel MOSFET

BSC014N04LSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC014N04LSATMA1 Estimated Pricing

Qty Low High
1+ $1.86 $1.86
10+ $1.18 $1.18
100+ $0.79 $0.79
500+ $0.63 $0.63
1,000+ $0.53 $0.53
5,000+ $0.50 $0.50
10,000+ $0.49 $0.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC014N04LSATMA1 Features

  • N-channel 40V OptiMOS Power MOSFET.
  • Very low on-resistance of 1.4 mΩ.
  • High continuous drain current up to 205 A.
  • Surface mount SuperSO8 (PG-TDSON-8) package.
  • RoHS compliant and halogen-free.

BSC014N04LSATMA1 Applications

  • Used in synchronous rectification circuits.
  • Ideal for high-current DC-DC converters.
  • Suitable for motor control applications.
  • Employed in power management systems.

BSC014N04LSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSC014N04LSATMA1?

40 V.

What package type is the BSC014N04LSATMA1 available in?

8-PowerTDFN (SuperSO8, PG-TDSON-8).

What is the operating temperature range?

-55°C to +150°C (junction).

Is the BSC014N04LSATMA1 RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the continuous drain current rating?

205 A at Tc=25°C, Vgs=10V; 145 A at Tc=100°C.

What is the gate threshold voltage?

Maximum 2 V at Id=250µA.

What is the typical on-resistance?

1.4 mΩ maximum at Id=50A, Vgs=10V.

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