| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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288 pcs
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288 pcs | On Request | 1 | On Request | On Request | 2030 | On Request | On Request |
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| SVHC Present |
The ON Semiconductor NTD110N02RT4 is a robust N-Channel MOSFET suitable for power management and switching applications. It offers a maximum drain-source voltage of 24V and can handle a continuous drain current of up to 110A at a case temperature of 25°C, or 12.5A at an ambient temperature of 25°C. The device has a power dissipation rating of 110W (Tc) and 1.5W (Ta).
This MOSFET is housed in a DPAK surface mount package, making it suitable for compact designs. Its typical gate-source threshold voltage is 2.1V, facilitating easy integration into various circuit designs. The NTD110N02RT4 is designed for reliable performance in demanding applications.
Key electrical characteristics include a maximum continuous drain current of 110A (Tc) and a power dissipation of 110W (Tc). The surface mount DPAK package ensures efficient thermal management and ease of assembly on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24V.
DPAK (TO-252) surface mount package.
110A at case temperature 25°C, and 12.5A at ambient temperature 25°C.
1.4 mOhm maximum at VGS=10V, ID=110A.
2.1V at VDS=10V, ID=250uA.
110W at case temperature 25°C and 1.5W at ambient temperature 25°C.