| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,002 pcs
|
30002 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,425 pcs
|
1425 pcs | On Request | 1 | On Request | On Request | 1303+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance |
The BSC014N03LS from Infineon Technologies is an N-channel Power MOSFET belonging to the OptiMOS™3 series. It is optimized for fast switching applications, making it suitable for Switched-Mode Power Supplies (SMPS) and DC/DC converters.
Key electrical characteristics include a Drain-Source Breakdown Voltage (V(BR)DSS) of 30V, a maximum Drain-Source On-State Resistance (RDS(on)) of 1.4 mΩ at VGS=10V and ID=30A, and a continuous drain current of up to 100A. The device features low on-resistance and excellent gate charge times product, contributing to efficient operation.
This MOSFET is available in the PG-TDSON-8 package. It is Pb-free and Halogen-free, complying with environmental standards. The device is avalanche rated for increased reliability in demanding applications.
Designed for performance and efficiency, the BSC014N03LS is a robust choice for power management solutions requiring high current handling and fast switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 100 A.
The maximum Drain-Source Breakdown Voltage is 30 V.
The maximum Gate Threshold Voltage is 2.2 V.
The maximum Drain-Source On-State Resistance is 1.4 mΩ at VGS=10V, ID=30A.
The package type is PG-TDSON-8.
Yes, this product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.