| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46,020 pcs
|
46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon BSC010NE2LSIATMA1 is a 25V N-Channel power MOSFET from the OptiMOS series, optimized for high-performance buck converter applications. It features a monolithic integrated Schottky-like diode and very low on-resistance, making it suitable for high-efficiency power conversion. Key electrical specifications include a maximum drain-source voltage of 25V, an ultra-low on-resistance of 1.05mΩ at 30A and 10V gate drive, a gate charge of 59nC, and an input capacitance of 4200pF at 12V. The device is rated for continuous drain current of 38A at ambient temperature and 100A at case temperature, with a pulsed drain current capability of 944A. It is 100% avalanche tested with a single-pulse avalanche current of 50A and energy of 100mJ. The MOSFET is housed in a surface-mount 8-PowerTDFN package (supplier package PG-TDSON-8-7) and is RoHS3 compliant and halogen-free per IEC61249-2-21. Designed for low-voltage, high-current switching, this component is ideal for power management in computing and telecom systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.05 | $2.05 |
| 10+ | $1.26 | $1.26 |
| 100+ | $0.93 | $0.93 |
| 500+ | $0.74 | $0.74 |
| 1,000+ | $0.65 | $0.65 |
| 5,000+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25V.
It is available in an 8-PowerTDFN surface-mount package (PG-TDSON-8-7).
Yes, it is RoHS3 compliant as verified by the datasheet.
The maximum on-resistance is 1.05mΩ at 30A and 10V gate drive.
The maximum gate charge is 59nC at Vgs=10V.
The continuous drain current is 38A at ambient temperature (Ta=25°C) and 100A at case temperature (Tc=25°C).
The input capacitance is 4200pF at Vds=12V.