| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,214 pcs
|
5214 pcs | On Request | 1 | On Request | On Request | 1620+PB | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies BSC010NE2LSI is an N-channel OptiMOSTM Power MOSFET designed for high-performance Buck converter applications. It features a 25V Drain-Source Voltage and a very low on-resistance of 1.05 mΩ at VGS=4.5V. The device offers a continuous drain current of up to 236A at TC=25°C with VGS=10V.
This MOSFET includes a monolithic integrated Schottky-like diode and is 100% avalanche tested. It is qualified according to JEDEC standards for target applications. The BSC010NE2LSI is supplied in a SuperSO8 (PG-TDSON-8) package, suitable for surface mount applications.
Key electrical parameters include a maximum Gate-Source Voltage of ±20V. Power dissipation is rated at 96W at TC=25°C. The component is Pb-free lead plating and RoHS compliant, as well as Halogen-free according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.62 | $0.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (VDS) for the BSC010NE2LSI is 25V.
The maximum On-Resistance (RDS(on)) is 1.05 mΩ at a Gate-Source Voltage (VGS) of 4.5V.
The continuous drain current (ID) is 236A at TC=25°C with VGS=10V, and 149A at TC=100°C with VGS=10V.
The BSC010NE2LSI is supplied in a SuperSO8 package, also referred to as PG-TDSON-8.
Yes, the BSC010NE2LSI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC010NE2LSI is 1 Unlimited.
Yes, the REACH Status for the BSC010NE2LSI is REACH Unaffected.
