Mfr Part #:

BSC010NE2LSI

Mfr Name: Infineon

The Infineon BSC010NE2LSI is an N-channel Power MOSFET with a 25V drain-source voltage and a low on-resistance of 1.05 mΩ at VGS=4.5V. It is designed for high-performance buck converters.

✓ Total Stock: 5,847 pcs

$ Price Range: $0.62

BSC010NE2LSI Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	3,674 pcs On Request	3674 pcs	On Request	1	On Request	On Request	19+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,173 pcs On Request	1173 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSC010NE2LSI Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	59 nC
Halogen Free	Halogen-free
Mounting Type	Surface Mount
SVHC Present	Not Present

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BSC010NE2LSI Description

Short technical summary and product information.

The Infineon BSC010NE2LSI is an N-channel OptiMOSTM Power MOSFET designed for high-performance buck converter applications. It features a drain-source voltage (VDS) of 25V and a maximum on-resistance (RDS(on)) of 1.05 mΩ at a gate-source voltage (VGS) of 4.5V. The device offers a continuous drain current (ID) of up to 236A at TC=25°C with VGS=10V.

This MOSFET includes a monolithic integrated Schottky-like diode and is 100% avalanche tested. It is qualified according to JEDEC standards for target applications. The BSC010NE2LSI comes in a PG-TDSON-8 package, suitable for surface mounting.

Key electrical parameters include a maximum pulsed drain current (ID,pulse) of 944A and a gate source voltage (VGS) range of ±20V. Power dissipation is rated at 96W at TC=25°C and 2.5W at TA=25°C with a thermal resistance of 50 K/W.

BSC010NE2LSI Quick Information

Product Type: N-channel Power MOSFET

Series: OptiMOS

Canonical Name: Infineon BSC010NE2LSI N-channel Power MOSFET

Subcategory: N-channel

BSC010NE2LSI Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: No

BSC010NE2LSI Estimated Pricing

Qty	Low	High
1+	$0.62	$0.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC010NE2LSI Features

25V Drain-Source Voltage
1.05 mΩ Max On-Resistance
236A Max Continuous Drain Current
Integrated Schottky-like Diode
PG-TDSON-8 Package

BSC010NE2LSI Applications

Optimized for buck converters
High-performance power switching
Integrated power solutions
Automotive applications
Industrial power supplies

BSC010NE2LSI FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the BSC010NE2LSI?

The maximum drain-source voltage (VDS) for the BSC010NE2LSI is 25V.

What is the maximum on-resistance of the BSC010NE2LSI?

The maximum on-resistance (RDS(on)) is 1.05 mΩ at VGS=4.5V.

What is the continuous drain current rating for the BSC010NE2LSI?

The continuous drain current (ID) is rated up to 236A at TC=25°C with VGS=10V.

What package type is the BSC010NE2LSI supplied in?

The BSC010NE2LSI is supplied in the PG-TDSON-8 package.

Is the BSC010NE2LSI RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSC010NE2LSI?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.