BSC010NE2LSATMA1 N-Channel MOSFET from Infineon with 25V drain-source voltage, 242A continuous drain current, and ultra-low 1mOhm on-resistance. Housed in a PG-TDSON-8 (SuperSO8) surface-mount package.
Mfr Part #:

BSC010NE2LSATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon with 25V drain-source voltage, 242A continuous drain current, and ultra-low 1mOhm on-resistance. Housed in a PG-TDSON-8 (SuperSO8) surface-mount package.
✓ Total Stock: 16,020 pcs
$ Price Range: $0.64 - $2.33

BSC010NE2LSATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16,020 pcs
16020 pcs On Request 1 On Request On Request On Request On Request On Request

BSC010NE2LSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC010NE2LSATMA1 Description

Short technical summary and product information.

The BSC010NE2LSATMA1 is an N-channel MOSFET from Infineon's OptiMOS series, designed for high-performance buck converters. It features a maximum drain-source voltage of 25V and a continuous drain current of 242A at Tc=25°C with Vgs=10V. The device offers an ultra-low on-resistance of 1mOhm maximum at Vgs=10V, and is also optimized for low gate drive voltages down to 4.5V. Key electrical characteristics include a total gate charge of 64nC and an output charge of 33nC, enabling efficient switching. The MOSFET is 100% avalanche tested with a single-pulse avalanche energy rating of 190mJ. It is housed in a PG-TDSON-8 (SuperSO8) surface-mount package, which provides superior thermal resistance. The device is RoHS compliant and halogen-free according to IEC61249-2-21, with Pb-free lead plating. Operating temperature range is -55°C to 150°C junction temperature.

BSC010NE2LSATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon BSC010NE2LSATMA1 N-Channel MOSFET, 25V, 242A, 1mOhm, PG-TDSON-8
Subcategory: Single MOSFET

BSC010NE2LSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC010NE2LSATMA1 Estimated Pricing

Qty Low High
1+ $2.33 $2.33
10+ $1.44 $1.44
100+ $0.99 $0.99
500+ $0.81 $0.81
1,000+ $0.72 $0.72
2,500+ $0.69 $0.69
5,000+ $0.64 $0.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC010NE2LSATMA1 Features

  • Ultra-low on-resistance of 1mOhm at 10V gate drive.
  • High continuous drain current of 242A at 25°C.
  • Optimized for high-performance buck converters.
  • 100% avalanche tested for ruggedness.
  • RoHS compliant and halogen-free.

BSC010NE2LSATMA1 Applications

  • Ideal for high-performance buck converter designs.
  • Suitable for high-current switching applications.
  • Used in power management for computing and telecom.
  • Applicable in synchronous rectification circuits.

BSC010NE2LSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (junction temperature).

What is the package type?

PG-TDSON-8 (SuperSO8) surface-mount package.

Is this device RoHS compliant?

Yes, the datasheet states RoHS compliant and halogen-free according to IEC61249-2-21. Note: compliance not independently verified.

What is the maximum drain-source voltage?

25V.

What is the typical on-resistance?

1mOhm maximum at Vgs=10V, Id=30A.

What is the gate charge?

64nC maximum at Vgs=10V.

What is the continuous drain current?

242A at Tc=25°C with Vgs=10V.

Home
Account

Categories