| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | 2026-06-03 03:15:07 | |
|
3,864 pcs
|
3864 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSC010NE2LS is an N-channel OptiMOSTM Power MOSFET with a 25V drain-source voltage rating. It is optimized for high-performance Buck converter applications, offering very low on-resistance (RDS(on)) of 1.0 mΩ at VGS=4.5V. The device boasts a continuous drain current (ID) of up to 242A at TC=25°C with VGS=10V.
This MOSFET is 100% avalanche tested and provides superior thermal resistance. It comes in a SuperSO8 package (PG-TDSON-8) suitable for surface mounting. The BSC010NE2LS is Pb-free lead plating and RoHS compliant, as well as Halogen-free according to IEC61249-2-21.
Key electrical parameters include a typical output charge (QOSS) of 33 nC and a typical gate charge (QG) of 64 nC. The device is qualified according to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) for the BSC010NE2LS is 25V.
The maximum on-resistance (RDS(on)) is 1.0 mΩ when the gate-source voltage (VGS) is 4.5V.
The continuous drain current (ID) is up to 242A at a case temperature of 25°C with a gate-source voltage of 10V.
The BSC010NE2LS is supplied in a SuperSO8 package, also known as PG-TDSON-8.
Yes, the BSC010NE2LS is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC010NE2LS is 1.