SMF28A-GS08
Vishay
The Vishay Dale SMF28A-GS08 is a TVS diode designed for transient voltage suppression. It offers a 28V operating voltage and 200W peak pulse power capability.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The BSC009NE2LS is an N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. This component is engineered for high-efficiency power switching with a maximum drain-source voltage rating of 25V. It exhibits a very low maximum on-resistance of 0.9 milliohms when driven at a gate-source voltage of 4.5V, minimizing conduction losses in demanding circuits.
The device supports a continuous drain current of 255 amperes at a case temperature of 25°C and 10V gate drive. At elevated temperatures or lower gate voltages, the current ratings adjust accordingly, providing robust performance across varying thermal conditions. A pulsed drain current capability of 1020A allows the MOSFET to handle transient load spikes effectively.
Thermal management is supported by a maximum power dissipation rating of 96W at 25°C case temperature. The total gate charge is typically 126nC, facilitating efficient driver design. Output capacitance is rated at 38nC, contributing to fast switching transitions.
Packaged in a surface-mount PG-TDSON-8 footprint, the BSC009NE2LS offers a compact form factor suitable for automated assembly. Its lead-free plating and halogen-free construction align with modern environmental standards for industrial and automotive electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25V.
The component uses a PG-TDSON-8 surface mount package.
The maximum on-resistance is 0.9 milliohms.
The continuous drain current is 255A at a case temperature of 25°C with a 10V gate drive.
It can handle a pulsed drain current of 1020A at a case temperature of 25°C.
The typical total gate charge is 126nC when charging from 0V to 10V.
The maximum single-pulse avalanche energy is 190mJ under specified test conditions.