| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | 1626+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Infineon BSC009NE2LS is an N-channel OptiMOSTM Power MOSFET designed for applications requiring high efficiency and low on-resistance. It features a drain-source voltage (VDS) of 25V and a maximum on-resistance (RDS(on)) of 0.9 mΩ at VGS=4.5V. This MOSFET is optimized for e-fuse and ORing applications, offering superior thermal resistance and 100% avalanche tested.
The device operates with a gate-source voltage (VGS) range of -20V to +20V. It supports a continuous drain current (ID) of up to 255A at TC=25°C with VGS=10V. The pulsed drain current (ID,pulse) can reach up to 1020A.
Packaged in a PG-TDSON-8 surface mount package, the BSC009NE2LS is Pb-free and Halogen-free compliant, meeting RoHS and IEC61249-2-21 standards. Its robust design and high performance make it suitable for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is 25V.
The maximum on-resistance (RDS(on)) is 0.9 mΩ at VGS=4.5V.
The continuous drain current (ID) is rated up to 255A at TC=25°C with VGS=10V.
The BSC009NE2LS is supplied in a PG-TDSON-8 package.
Yes, the BSC009NE2LS is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1.
The BSC009NE2LS is REACH Unaffected.