BSC009NE2LS The Infineon BSC009NE2LS is an N-channel Power MOSFET with a 25V drain-source voltage and a maximum on-resistance of 0.9 mΩ. It is optimized for e-fuse and ORing applications.
Mfr Part #:

BSC009NE2LS

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon BSC009NE2LS is an N-channel Power MOSFET with a 25V drain-source voltage and a maximum on-resistance of 0.9 mΩ. It is optimized for e-fuse and ORing applications.
✓ Total Stock: 6,702 pcs
$ Price Range: $2.40

BSC009NE2LS Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,500 pcs
5500 pcs On Request 1 On Request On Request 23+ On Request On Request
Non-Authorised Inventory information
1,077 pcs
1077 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
125 pcs
125 pcs On Request 1 On Request On Request 1626+ On Request On Request

BSC009NE2LS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Lead Style
Mounting Type
SVHC Present
Tape & Reel

BSC009NE2LS Description

Short technical summary and product information.

The Infineon BSC009NE2LS is an N-channel OptiMOSTM Power MOSFET designed for applications requiring high efficiency and low on-resistance. It features a drain-source voltage (VDS) of 25V and a maximum on-resistance (RDS(on)) of 0.9 mΩ at VGS=4.5V. This MOSFET is optimized for e-fuse and ORing applications, offering superior thermal resistance and 100% avalanche tested.

 

The device operates with a gate-source voltage (VGS) range of -20V to +20V. It supports a continuous drain current (ID) of up to 255A at TC=25°C with VGS=10V. The pulsed drain current (ID,pulse) can reach up to 1020A.

 

Packaged in a PG-TDSON-8 surface mount package, the BSC009NE2LS is Pb-free and Halogen-free compliant, meeting RoHS and IEC61249-2-21 standards. Its robust design and high performance make it suitable for demanding power management tasks.

BSC009NE2LS Quick Information

Product Type: N-channel Power MOSFET
Series: OptiMOS
Canonical Name: Infineon BSC009NE2LS N-channel Power MOSFET
Subcategory: N-channel

BSC009NE2LS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC009NE2LS Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC009NE2LS Features

  • Optimized for e-fuse and ORing applications.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • Pb-free and Halogen-free compliant.

BSC009NE2LS Applications

  • Suitable for e-fuse circuits.
  • Ideal for ORing applications.
  • Power management solutions.

BSC009NE2LS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the BSC009NE2LS MOSFET?

The drain-source voltage (VDS) is 25V.

What is the maximum on-resistance for the BSC009NE2LS?

The maximum on-resistance (RDS(on)) is 0.9 mΩ at VGS=4.5V.

What is the continuous drain current rating for the BSC009NE2LS?

The continuous drain current (ID) is rated up to 255A at TC=25°C with VGS=10V.

What package type is the BSC009NE2LS MOSFET supplied in?

The BSC009NE2LS is supplied in a PG-TDSON-8 package.

Is the BSC009NE2LS RoHS compliant?

Yes, the BSC009NE2LS is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the BSC009NE2LS?

The Moisture Sensitivity Level (MSL) is 1.

Does the BSC009NE2LS meet REACH regulations?

The BSC009NE2LS is REACH Unaffected.

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