BSC007N04LS6ATMA1 N-Channel MOSFET by Infineon Technologies, rated for 40V drain-source voltage and 381A continuous drain current. Low on-resistance of 0.7mΩ in a surface mount PG-TDSON-8 package.
Mfr Part #:

BSC007N04LS6ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET by Infineon Technologies, rated for 40V drain-source voltage and 381A continuous drain current. Low on-resistance of 0.7mΩ in a surface mount PG-TDSON-8 package.
✓ Total Stock: 6,020 pcs
$ Price Range: $1.10 - $3.69

BSC007N04LS6ATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC007N04LS6ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC007N04LS6ATMA1 Description

Short technical summary and product information.

The BSC007N04LS6ATMA1 is an N-Channel Power MOSFET from Infineon's OptiMOS 6 family, designed for synchronous rectification and high-current switching applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 381A at Tc=25°C. The device offers a very low on-resistance of 0.7 mOhm (max) at 50A and 10V gate drive, minimizing conduction losses.

 

Key electrical characteristics include a gate charge of 94 nC (0-10V) and 45 nC (0-4.5V), input capacitance of 8400 pF, and single-pulse avalanche energy of 674 mJ. The MOSFET is 100% avalanche tested for ruggedness. It operates over a junction temperature range of -55°C to 175°C.

 

The device is housed in a PG-TDSON-8 surface mount package (supplier package PG-TDSON-8-6) with exposed drain pads for efficient thermal management. It is RoHS compliant, halogen-free per IEC61249-2-21, and fully qualified for industrial applications per JEDEC standards.

BSC007N04LS6ATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 6
Canonical Name: BSC007N04LS6ATMA1
Subcategory: Single N-Channel MOSFET

BSC007N04LS6ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

BSC007N04LS6ATMA1 Estimated Pricing

Qty Low High
1+ $3.69 $3.69
10+ $2.20 $2.20
100+ $1.57 $1.57
500+ $1.37 $1.37
1,000+ $1.32 $1.32
2,500+ $1.29 $1.29
5,000+ $1.10 $1.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC007N04LS6ATMA1 Features

  • Very low on-resistance of 0.7 mOhm.
  • Rated for 40V drain-source voltage.
  • Continuous drain current up to 381 A.
  • Avalanche tested for ruggedness.
  • RoHS compliant and halogen-free.

BSC007N04LS6ATMA1 Applications

  • Ideal for synchronous rectification circuits.
  • Used in high-current power supplies.
  • Suitable for motor drive applications.
  • Optimized for low voltage switching.

BSC007N04LS6ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

Maximum 40 V.

What package is the BSC007N04LS6ATMA1 available in?

PG-TDSON-8 surface mount package (supplier device package PG-TDSON-8-6).

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the BSC007N04LS6ATMA1 RoHS compliant?

Yes, RoHS compliant and halogen-free according to IEC61249-2-21.

What is the on-resistance of the BSC007N04LS6ATMA1?

Maximum 0.7 mOhm at 50A and 10V gate drive.

What is the gate charge?

94 nC at 0-10V gate drive, 45 nC at 0-4.5V gate drive.

What is the avalanche energy rating?

Single pulse avalanche energy 674 mJ at 50A and 25Ω gate resistance.

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