| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The Infineon BSC004NE2LS5 is an N-channel OptiMOS™ 5 Power MOSFET with a drain-source voltage rating of 25V. It is optimized for OR-ing applications, offering a very low on-resistance of 0.45 mΩ at a gate-source voltage of 4.5V. This device boasts a high continuous drain current capability of 479A at 25°C with a 10V gate-source voltage.
Manufactured by Infineon, this MOSFET is fully qualified according to JEDEC for industrial applications. It features 100% avalanche tested and superior thermal resistance. The component is compliant with RoHS and Halogen-free standards, utilizing Pb-free lead plating. The package type is PG-TDSON-8, suitable for surface mount applications.
Key electrical characteristics include a maximum gate-source voltage of ±20V and a maximum power dissipation of 188W at 25°C. The BSC004NE2LS5 is designed for high-performance power management tasks where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the BSC004NE2LS5 is 25V.
The typical On-Resistance of the BSC004NE2LS5 is 0.45 mΩ at a Gate-Source Voltage of 4.5V.
The continuous drain current for the BSC004NE2LS5 is 479A at 25°C with a 10V Gate-Source Voltage.
The BSC004NE2LS5 comes in a PG-TDSON-8 package.
The BSC004NE2LS5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC004NE2LS5 is 1 Unlimited.
The BSC004NE2LS5 is REACH Unaffected.