BSB280N15NZ3G BSB280N15NZ3G is an N-Channel MOSFET from Infineon Technologies with a drain-source voltage of 150V and continuous drain current of 9A (ambient) or 30A (case). It features a low on-resistance of 28mOhm at 10V gate drive.
Mfr Part #:

BSB280N15NZ3G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BSB280N15NZ3G is an N-Channel MOSFET from Infineon Technologies with a drain-source voltage of 150V and continuous drain current of 9A (ambient) or 30A (case). It features a low on-resistance of 28mOhm at 10V gate drive.
✓ Total Stock: 5,934 pcs

BSB280N15NZ3G Available from 1 distributor

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BSB280N15NZ3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSB280N15NZ3G Description

Short technical summary and product information.

The BSB280N15NZ3G is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for power switching applications with a maximum drain-source voltage of 150V and a continuous drain current of 30A at case temperature (9A at ambient). The device offers a low on-resistance of 28mOhm maximum at 30A drain current and 10V gate drive.

 

Electrical characteristics include a gate threshold voltage of 4V maximum at 60µA, a gate charge of 21nC at 10V, and an input capacitance of 1600pF at 75V drain-source voltage. These parameters make it suitable for high-frequency switching and efficient power conversion.

 

The MOSFET is housed in a DirectFET Isometric MX surface mount package (supplier package MG-WDSON-2-5). It operates over a junction temperature range of -40°C to 150°C and has a maximum power dissipation of 2.8W at ambient temperature and 57W at case temperature.

BSB280N15NZ3G Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon BSB280N15NZ3G N-Channel MOSFET
Subcategory: Single MOSFET

BSB280N15NZ3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSB280N15NZ3G Features

  • N-Channel MOSFET with 150V drain-source voltage.
  • Continuous drain current up to 30A at case temperature.
  • Low on-resistance of 28mOhm at 10V gate drive.
  • Surface mount DirectFET Isometric MX package.
  • Operating temperature range from -40°C to 150°C.

BSB280N15NZ3G Applications

  • Suitable for power switching applications.
  • Used in DC-DC converter designs.
  • Ideal for motor control circuits.

BSB280N15NZ3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSB280N15NZ3G?

The maximum drain-source voltage (Vdss) is 150V.

What is the maximum drain current?

The continuous drain current is 9A at ambient temperature and 30A at case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 28mOhm at 30A drain current and 10V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4V at 60µA drain current.

What is the operating temperature range?

The operating junction temperature range is -40°C to 150°C.

What package is the BSB280N15NZ3G available in?

It is available in a DirectFET Isometric MX surface mount package (supplier package MG-WDSON-2-5).

Is the BSB280N15NZ3G RoHS compliant?

It is listed as RoHS3 Compliant, but this status is unverified.

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