| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,500 pcs
|
30500 pcs | On Request | 1 | On Request | On Request | 1749+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSB165N15NZ3G is an N-Channel enhancement mode MOSFET designed for high-efficiency power management applications. With a maximum drain-source voltage of 150V and continuous drain current up to 45A at Tc=25°C, it delivers robust performance in switching circuits. The device exhibits a low maximum on-resistance of 16.5mOhm at 30A and 10V gate drive, minimizing conduction losses. Gate charge is typically 35nC at 10V, and input capacitance is 2800pF at 75V, enabling fast switching. The MOSFET is surface mounted in a DirectFET Isometric MZ package (MG-WDSON-2-9), which provides excellent thermal performance with a maximum power dissipation of 78W at Tc=25°C. It operates over a junction temperature range of -40°C to 150°C, making it suitable for demanding industrial and automotive environments. Compliance data indicates RoHS3 compliance (unverified).
| Qty | Low | High |
|---|---|---|
| 156+ | $1.48 | $1.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V maximum.
45A at case temperature 25°C (Tc).
DirectFET Isometric MZ (MG-WDSON-2-9).
-40°C to 150°C (junction temperature).
RoHS3 compliant (unverified).
4V maximum at drain current 110µA.
16.5mOhm maximum at 30A drain current and 10V gate-source voltage.