| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
28,500 pcs
|
28500 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The BSB104N08NP3G from Infineon Technologies is an N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 80V and can handle a continuous drain current of up to 13A at 25°C with a Vgs of 10V.
This MOSFET is housed in a WDSON package, suitable for surface-mount applications. The component is specified with a RoHS3 compliant status and an MSL of 1, indicating unlimited shelf life under standard conditions.
Key electrical characteristics include its N-channel enhancement mode operation. The part number BSB104N08NP3G is directly associated with Infineon Technologies, a leading manufacturer in power semiconductors. This component is part of the broader category of discrete semiconductor products, specifically single MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80V.
The continuous drain current is 13A.
It is supplied in a WDSON package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.