| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The BSB024N03LX G is an N-Channel MOSFET from Infineon Technologies designed for high-current power switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 145A at case temperature (Tc) or 27A at ambient temperature. The device offers a low maximum on-resistance of 2.4mOhm at 30A and 10V gate drive, enabling efficient power conversion.
Key electrical characteristics include a maximum gate charge of 72nC at 10V and an input capacitance of 4900pF at 15V drain-source. The recommended gate drive voltages are 4.5V and 10V, with a maximum gate-source voltage of ±20V. Power dissipation is rated at 78W at case temperature and 2.8W at ambient. The operating junction temperature range is -40°C to 150°C.
The MOSFET is housed in a surface-mount 3-WDSON package (also known as CanPAK M), suitable for compact PCB layouts. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The part is also REACH unaffected.
30V.
145A at case temperature 25°C, 27A at ambient temperature.
2.4mOhm max at 30A, 10V.
72nC max at 10V.
-40°C to 150°C junction.
3-WDSON (CanPAK M).
RoHS3 Compliant (unverified).