| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31,000 pcs
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31000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The BSB017N03LX3 G is an N-Channel enhancement mode power MOSFET from Infineon Technologies' OptiMOS 30V family. It features a maximum drain-source voltage of 30V and a continuous drain current of 147A at 25°C case temperature. The device offers an ultra-low on-resistance of 1.7mOhm maximum at 10V gate drive, enabling high efficiency in power conversion applications.
Key electrical characteristics include a gate charge of 77nC typical and an output charge of 50nC, which contribute to fast switching performance. The MOSFET is avalanche rated with a single pulse avalanche energy of 225mJ. It is designed for high switching frequency DC/DC converters and synchronous rectification.
The device is housed in a 3-WDSON surface mount package with the supplier device package designation MG-WDSON-2 (CanPAK M). It supports double-sided cooling and has a low profile of less than 0.7mm. The operating junction temperature range is -40°C to 150°C.
The maximum drain-source voltage is 30V.
147A at Tc=25°C with VGS=10V, and 93A at Tc=100°C.
The maximum on-resistance is 1.7mOhm at Id=30A and Vgs=10V.
It uses a 3-WDSON surface mount package (MG-WDSON-2, CanPAK M).
The operating junction temperature range is -40°C to 150°C.
The datasheet states it is RoHS compliant and Pb-free plating.