BSB013NE2LXI

The BSB013NE2LXI is a JFET transistor manufactured by Infineon Technologies. It features a drain-source breakdown voltage (V(BR)DSS) of 25V, making it suitable for low to moderate voltage switching and amplification circuits. The device has a gate threshold voltage (V GS(th)) typically at 1.2V, with a maximum of 2V, indicating the voltage required to turn the device on. Its zero gate voltage drain current (I DSS) is up to 500 µA, and the gate-source leakage current (I GSS) is limited to 100 nA. The device's on-state resistance (R DS(on)) is 1.8 mΩ at V GS=4.5V and 1.3 mΩ at V GS=10V, which influences conduction losses. It is packaged in the MG-WDSON-2 surface-mount package, designed for PCB mounting. The device operates within a temperature range of -40°C to 150°C and complies with RoHS standards. It is intended for use in RF switching, impedance buffering, and other high-impedance applications where low R DS(on) and high voltage handling are required.