| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,434 pcs
|
8434 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
7,150 pcs
|
7150 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
169 pcs
|
169 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Infineon BSB013NE2LXI is an OptiMOSTM Power-MOSFET featuring an N-channel enhancement mode. It is optimized for high-performance Buck converter applications and includes an integrated monolithic Schottky-like diode. The MOSFET boasts a low profile of less than 0.7 mm and is 100% avalanche and R G tested.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 25V, a Gate Threshold Voltage ranging from 1.2V to 2V, and a maximum Drain-Source On-State Resistance of 1.3 mΩ at 10V gate-source voltage and 30A drain current. Continuous drain current is rated at 163A at 25°C case temperature.
Thermal performance is supported by a junction-to-case thermal resistance of 1 K/W (bottom) and 2.2 K/W (top). The device operates within a temperature range of -40°C to 150°C. It is compatible with the DirectFET® package MX footprint and outline and is qualified according to JEDEC standards.
This MOSFET is Pb-free and RoHS compliant, making it suitable for various target applications requiring efficient power conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 163A at 25°C case temperature.
The maximum Drain-Source On-State Resistance is 1.3 mΩ at 10V gate-source voltage and 30A drain current.
The Gate Threshold Voltage ranges from 1.2V to 2V.
The operating and storage temperature range is -40°C to 150°C.
The package type is MG-WDSON-2.
Yes, this product is RoHS3 Compliant.