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BSB012NE2LXI

The Infineon Technologies BSB012NE2LXI is an N-channel Power MOSFET designed for high-performance buck converters. It features a 25V drain-source voltage and a low on-resistance.

✓ Total Stock: 1,502 pcs

$ Price Range: $2.40

BSB012NE2LXI Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Rayichip ✓ Non-Authorised Inventory information	1,202 pcs On Request	1202 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	300 pcs On Request	300 pcs	On Request	1	On Request	On Request	1535+	On Request	On Request

BSB012NE2LXI Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon Technologies

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BSB012NE2LXI Description

Short technical summary and product information.

The Infineon Technologies BSB012NE2LXI is an N-channel OptiMOSTM Power-MOSFET with a 25V drain-source voltage rating. It is optimized for high-performance buck converter applications and features an integrated Schottky-like diode.

Key electrical characteristics include a maximum on-resistance of 1.2 mΩ at VGS=10V and TC=25°C, a continuous drain current of 170A at TC=25°C, and a pulsed drain current of up to 400A. The device also offers a typical output capacitance (Qoss) of 39 nC and a typical gate charge (Qg) of 62 nC.

This MOSFET is packaged in a low-profile CanPAK M-size package, measuring less than 0.7mm in height. It is compatible with the DirectFET® MX footprint and outline. The device is 100% avalanche tested and RG tested, and features double-sided cooling. It is Pb-free and RoHS compliant.

Designed for power management applications, the BSB012NE2LXI is qualified according to JEDEC standards for target applications.

BSB012NE2LXI Quick Information

Product Type: Power MOSFET

Canonical Name: OptiMOSTM Power-MOSFET, 25 V

Subcategory: Power MOSFET

BSB012NE2LXI Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free lead plating

BSB012NE2LXI Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSB012NE2LXI Features

Optimized SyncFET for high performance buck converters.
Integrated monolithic Schottky-like diode.
Low profile package less than 0.7mm.
100% avalanche and RG tested.
Pb-free lead plating; RoHS compliant.

BSB012NE2LXI Applications

Suitable for high-current power switching applications.
Ideal for buck converter circuits in power supplies.
Used in automotive and industrial power management.
Applicable in load switching for motor control systems.
Suitable for high-frequency switching in power electronics.

BSB012NE2LXI FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating for the BSB012NE2LXI?

The drain-source voltage rating is 25 V.

What is the maximum on-resistance of the BSB012NE2LXI?

The maximum on-resistance is 1.2 mΩ at a gate-source voltage of 10 V and a case temperature of 25 °C.

What is the continuous drain current for the BSB012NE2LXI?

The continuous drain current is 170 A at a gate-source voltage of 10 V and a case temperature of 25 °C.

What package type is the BSB012NE2LXI MOSFET in?

The BSB012NE2LXI is in the MG-WDSON-2 package.

What is the RoHS status of the BSB012NE2LXI?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSB012NE2LXI?

The Moisture Sensitivity Level is 1 Unlimited.