| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,710 pcs
|
3710 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 1224+ | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
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The BSB012NE2LX is an N-Channel Power MOSFET from Infineon's OptiMOS 25V family. It is designed for high-performance buck converters and synchronous rectification in server, datacom, and telecom applications. Key specifications include a maximum drain-source voltage of 25V, continuous drain current of 170A at Tc=25°C (37A at Ta=25°C), and a maximum on-resistance of 1.2 mΩ at VGS=10V, ID=30A. The device features ultra-low gate charge (typical 32 nC) and output charge (35 nC), enabling fast switching with low EMI. It is 100% avalanche tested and qualified to JEDEC standards. The MOSFET is housed in a 3-WDSON package (MG-WDSON-2, CanPAK) with double-sided cooling and a low profile of less than 0.7 mm. It supports surface mount mounting and is RoHS compliant and halogen-free.
25 V.
3-WDSON (MG-WDSON-2, CanPAK) surface mount package.
-40°C to 150°C (junction temperature).
Yes, RoHS3 compliant with Pb-free plating.
32 nC at VGS=10V.
1.2 mΩ at ID=30A, VGS=10V.
170 A.