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BSB008NE2LX The Infineon Technologies BSB008NE2LX is an N-channel Power MOSFET designed for e-fuse and OR-ing applications. It offers ultra-low Rdson in a low-profile CanPAK MX-size package.
Mfr Part #:

BSB008NE2LX

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSB008NE2LX is an N-channel Power MOSFET designed for e-fuse and OR-ing applications. It offers ultra-low Rdson in a low-profile CanPAK MX-size package.
✓ Total Stock: 5,130 pcs
$ Price Range: $2.40

BSB008NE2LX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,130 pcs
On Request
5130 pcs On Request 1 On Request On Request 15+ROHS On Request On Request
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BSB008NE2LX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BSB008NE2LX Description

Short technical summary and product information.

The Infineon Technologies BSB008NE2LX is a high-performance N-channel Power MOSFET from the OptiMOSTM family. It is specifically optimized for applications such as electronic fuses (e-fuse) and OR-ing circuits, providing efficient power management.

 

Key electrical characteristics include a Drain-Source Voltage (VDS) of 25V and a maximum On-Resistance (RDS(on)) of 0.8 mΩ at a gate-source voltage of 10V and 180A drain current. The device supports a continuous drain current of up to 180A at 25°C case temperature and 165A at 100°C case temperature. It also features a high pulsed drain current capability of 400A.

 

This MOSFET is housed in a CanPAK MX-size package, known for its low profile (<0.7mm) and compatibility with DirectFET® MX footprint and outline. It is 100% avalanche tested and 100% Rg tested, ensuring reliability and performance. The design supports double-sided cooling for enhanced thermal management.

BSB008NE2LX Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies BSB008NE2LX N-channel Power MOSFET
Subcategory: Power MOSFET

BSB008NE2LX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSB008NE2LX Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSB008NE2LX Features

  • Optimized for e-fuse and OR-ing applications.
  • Ultra-low Rdson in CanPAK-MX footprint.
  • Low profile package less than 0.7mm.
  • 100% avalanche and Rg tested.
  • Double-sided cooling capability.

BSB008NE2LX Applications

  • High-efficiency power conversion circuits.
  • DC-DC converter and voltage regulator modules.
  • Motor drive and power management systems.
  • Battery protection and load switching.

BSB008NE2LX FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSB008NE2LX?

The maximum drain-source voltage (VDS) is 25V.

What is the on-resistance of the BSB008NE2LX?

The maximum on-resistance (RDS(on)) is 0.8 mOhm at VGS=10V and ID=180A.

What is the maximum continuous drain current of the BSB008NE2LX?

The maximum continuous drain current (ID) is 180A at TC=25°C and 165A at TC=100°C.

What package is the BSB008NE2LX available in?

The BSB008NE2LX is available in an MG-WDSON-2 package for surface mount mounting.

What is the gate-source voltage range for the BSB008NE2LX?

The gate-source voltage (VGS) range is -20V to 20V.

What is the pulsed drain current rating of the BSB008NE2LX?

The maximum pulsed drain current (ID,pulse) is 400A at TC=25°C.

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