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BSB008NE2LX The Infineon BSB008NE2LX is an N-channel Power MOSFET designed for e-fuse and OR-ing applications. It offers ultra-low RDS(on) in a low-profile package.
Mfr Part #:

BSB008NE2LX

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon BSB008NE2LX is an N-channel Power MOSFET designed for e-fuse and OR-ing applications. It offers ultra-low RDS(on) in a low-profile package.
✓ Total Stock: 970 pcs
$ Price Range: $3.03

BSB008NE2LX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
970 pcs
On Request
970 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSB008NE2LX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BSB008NE2LX Description

Short technical summary and product information.

The Infineon BSB008NE2LX is an N-channel OptiMOSTM Power MOSFET with a drain-source voltage rating of 25V. It is optimized for applications such as e-fuses and OR-ing circuits, providing an ultra-low on-resistance of 0.8 mΩ at a continuous drain current of 180A (VGS=10V, TC=25°C).

 

This MOSFET features a low profile of less than 0.7mm and is packaged in the CanPAK MX-size format, which is compatible with DirectFET® MX footprint and outline. It is 100% avalanche tested and 100% Rg tested, ensuring reliability in demanding applications. The design also supports double-sided cooling.

 

Key electrical characteristics include a maximum pulsed drain current of 400A and an avalanche energy rating of 600 mJ. The gate source voltage is rated for ±20V. This component is qualified according to JEDEC standards for target applications.

BSB008NE2LX Quick Information

Product Type: MOSFET
Series: BSB
Canonical Name: Infineon BSB008NE2LX N-channel Power MOSFET
Subcategory: Power MOSFET

BSB008NE2LX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSB008NE2LX Estimated Pricing

Qty Low High
1+ $3.03 $3.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSB008NE2LX Features

  • Optimized for e-fuse and OR-ing applications.
  • Ultra-low RDS(on) in CanPAK-MX footprint.
  • Low profile package (<0.7mm).
  • 100% avalanche and Rg tested.
  • Compatible with DirectFET® MX package.

BSB008NE2LX Applications

  • Power management circuits.
  • Electronic fuse applications.
  • OR-ing functionality.
  • High current switching.

BSB008NE2LX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BSB008NE2LX MOSFET?

The maximum drain-source voltage (VDS) for the BSB008NE2LX is 25V.

What is the maximum on-resistance of the BSB008NE2LX MOSFET?

The maximum on-resistance (RDS(on)) is 0.8 mΩ when VGS is 10V and the drain current is 180A.

What is the continuous drain current rating for the BSB008NE2LX?

The continuous drain current (ID) is rated at 180A at TC=25°C with VGS=10V, 165A at TC=100°C with VGS=10V, and 46A at TA=25°C with VGS=10V and RthJA=45 K/W.

What package type is the BSB008NE2LX MOSFET supplied in?

The BSB008NE2LX is supplied in the MG-WDSON-2 package.

What is the RoHS status of the BSB008NE2LX?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSB008NE2LX?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for the BSB008NE2LX?

The REACH status is REACH Unaffected.

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