BS870Q-7-F N-Channel MOSFET with 60V drain-source voltage, 250mA continuous drain current, and 5 Ohm on-resistance. Surface-mount SOT-23-3 package.
Mfr Part #:

BS870Q-7-F

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET with 60V drain-source voltage, 250mA continuous drain current, and 5 Ohm on-resistance. Surface-mount SOT-23-3 package.
✓ Total Stock: 58,058 pcs
$ Price Range: $0.06 - $0.29

BS870Q-7-F Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
58,020 pcs
58020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
38 pcs
38 pcs On Request 1 On Request On Request On Request On Request On Request

BS870Q-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

BS870Q-7-F Description

Short technical summary and product information.

The BS870Q-7-F is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive and general-purpose switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 250mA at 25°C ambient. The on-resistance is typically 5 Ohms maximum at VGS=10V and ID=200mA, ensuring low conduction losses. The gate threshold voltage is 3V maximum at ID=250µA, allowing logic-level drive. Input capacitance is only 50pF at VDS=10V, enabling fast switching.

 

This device is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive systems such as engine management, DC-DC converters, and body control electronics. It is fully RoHS3 compliant, lead-free, and halogen-free (green device). The MOSFET is housed in a surface-mount SOT-23-3 package with matte tin terminals, rated for operating junction temperatures from -55°C to 150°C. Power dissipation is limited to 300mW at 25°C ambient, with a thermal resistance of 417°C/W junction-to-ambient.

 

The BS870Q-7-F is supplied in tape and reel packaging with 3000 pieces per reel, suitable for automated assembly. Its compact footprint and robust environmental compliance make it a reliable choice for space-constrained and high-reliability designs.

BS870Q-7-F Quick Information

Product Type: N-Channel MOSFET
Canonical Name: BS870Q-7-F N-Channel MOSFET, 60V, 250mA, SOT-23-3
Subcategory: Single MOSFET

BS870Q-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free (Totally Lead-Free)

BS870Q-7-F Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.13 $0.13
100+ $0.11 $0.11
500+ $0.10 $0.10
1,000+ $0.08 $0.08
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BS870Q-7-F Features

  • 60V drain-source voltage rating.
  • 250mA continuous drain current.
  • Low on-resistance of 5 Ohms.
  • AEC-Q101 qualified for automotive.
  • Surface-mount SOT-23-3 package.

BS870Q-7-F Applications

  • Engine management systems.
  • DC-DC converter circuits.
  • Body control electronics.

BS870Q-7-F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What is the package type?

SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current?

250mA at TA = +25°C, VGS = 4.5V.

Is this MOSFET qualified for automotive applications?

Yes, AEC-Q101 qualified and PPAP capable.

What is the on-resistance?

5 Ohms maximum at VGS = 10V, ID = 200mA.

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