| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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95 pcs
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95 pcs | On Request | 1 | On Request | On Request | 0722+ | On Request | On Request |
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The BS62LV4006PIP70 by Brilliance Semiconductor (BSI) is a high-performance, very low power CMOS Static Random Access Memory (SRAM). It is organized as 524,288 by 8 bits, providing a total density of 4Mbit.
This SRAM operates over a wide supply voltage range of 2.4V to 5.5V. It features advanced CMOS technology for high speed and low power consumption. Key electrical characteristics include a maximum access time of 55ns at 3.0V/85°C and a typical CMOS standby current of 0.25µA at 3.0V/25°C. Operating current is 30mA (Max.) at 55ns and 2mA (Max.) at 1MHz.
The BS62LV4006PIP70 comes in a 32-pin DIP package suitable for through-hole mounting. It is designed for applications requiring reliable and efficient memory storage with minimal power draw.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 2.4V to 5.5V.
The maximum access time is 55ns at 3.0V and 85°C.
The memory size is 4Mbit, organized as 524,288 by 8 bits.
The typical CMOS standby current is 0.25µA at 25°C.
It is available in a 32-DIP (32-pin DIP) package.