| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,780 pcs
|
2780 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Type | |
| Power Consumption |
The BS616LV2016EIP70 is a high-performance CMOS Static Random Access Memory (SRAM) from Brilliance Semiconductor. This component features a memory organization of 128K words by 16 bits, making it suitable for various data storage applications.
Designed with very low power and voltage requirements in mind, the BS616LV2016EIP70 is an efficient choice for power-sensitive designs. It adheres to RoHS3 compliance, indicating its suitability for environmentally conscious electronic manufacturing.
Further technical details regarding operating voltage, access time, and specific current requirements would typically be found in the manufacturer's datasheet. The component is classified under the Memory category within Integrated Circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BS616LV2016EIP70 is a CMOS SRAM.
The memory organization is 128K words by 16 bits.
Yes, it is designed for very low power/voltage operation.
The BS616LV2016EIP70 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
Yes, the REACH Status is REACH Unaffected.