| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Turn Off Time | |
| Turn On Time | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BS250P is a P-Channel enhancement mode vertical DMOS MOSFET from Diodes Incorporated. It features a drain-source voltage of -45V (45V absolute) and a continuous drain current of -230mA at 25°C ambient temperature. The device has a maximum on-resistance of 14 Ohms at VGS=-10V and ID=-200mA, making it suitable for low-power switching and signal routing applications.
Key electrical characteristics include a gate threshold voltage range of -1V to -3.5V, typical input capacitance of 60pF, and fast switching times of 20ns for both turn-on and turn-off. The maximum power dissipation is 700mW at 25°C ambient, and the junction temperature range is -55°C to 150°C.
The BS250P is housed in a through-hole TO-226-3 / TO-92-3 (TO-226AA) package with a supplier device package of TO-92. It is designed for applications requiring a low-power P-Channel MOSFET with standard through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.53 | $1.53 |
| 10+ | $0.96 | $0.96 |
| 100+ | $0.64 | $0.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-45V (45V absolute value).
TO-226-3, TO-92-3 (TO-226AA) with supplier device package TO-92.
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified - low confidence).
-1V to -3.5V at ID=-1mA.
14 Ohm maximum at VGS=-10V, ID=-200mA.
700mW at 25°C ambient.