| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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244 pcs
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244 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The BS2100F-E2 from ROHM Semiconductor is a high-voltage gate driver IC. It is designed to drive IGBT and N-Channel MOSFETs, featuring independent channels and non-inverting input types.
This device operates with a supply voltage range of 10V to 18V, with a maximum high-side voltage rating of 600V. Key electrical characteristics include output currents of 60mA and 130mA, with rise and fall times of 200ns and 100ns respectively. The maximum turn-on delay is 320ns, and the maximum turn-off delay is 330ns. Power dissipation is rated at 670mW.
The BS2100F-E2 is suitable for applications requiring efficient control of power transistors. Its operating temperature range is from -40°C to 125°C.
Packaged in an 8-SOP (Surface Mount) configuration, this component is designed for standard PCB assembly processes. The packaging options include Cut Tape, MouseReel, and Reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 10V to 18V.
The operating temperature range is -40°C to 125°C.
It is available in a SOP-8 (8-SOIC) package.
It contains 2 drivers.
The high-side voltage rating is 600V.