| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The BS208 is a P-channel enhancement mode vertical D-MOS transistor manufactured by SI. It is designed for applications such as relay drivers, high-speed switching, and line transformer drivers.
Key electrical specifications include a maximum drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 0.2A. The drain-source on-state resistance (RDS(on)) is a maximum of 14Ω at a gate-source voltage (VGS) of -10V and drain current of -200mA. The gate-source voltage (VGS) range is ±20V.
This D-MOS transistor is housed in a TO-92 package, suitable for through-hole mounting. It offers direct interface to C-MOS and high-speed switching capabilities. The device has a total power dissipation of 0.83W at 25°C ambient temperature and a junction-to-ambient thermal resistance of 150 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the BS208 is 200V.
The continuous drain current of the BS208 is 0.2A.
The on-state resistance of the BS208 is a maximum of 14Ω at VGS = -10V and ID = -200mA.
The BS208 is available in a TO-92 package.
The storage temperature range for the BS208 is -65 to +150 °C.