| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,957 pcs
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9957 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request | |
|
985 pcs
|
985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
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The BS170RLRAG is an N-Channel enhancement-mode MOSFET from On Semiconductor. It features a drain-source voltage rating of 60V and a continuous drain current of 500mA. The device offers a maximum on-resistance of 5 Ohms at 200mA drain current and 10V gate-source drive. The gate threshold voltage is 3V maximum at 1mA drain current, and the maximum gate-source voltage is ±20V. Input capacitance is 60pF typical at 10V drain-source bias.
This MOSFET is designed for low-power switching and amplification applications. It can dissipate up to 350mW of power and operates over a junction temperature range of -55°C to 150°C. The device is housed in a through-hole TO-92-3 package (TO-226-3 with formed leads), making it suitable for breadboard prototyping and manual assembly.
Typical applications include load switching, logic level conversion, and general purpose switching circuits in battery-powered and portable equipment. The BS170RLRAG is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).
-55°C to 150°C (junction temperature).
TO-92-3 (TO-226-3) through-hole package.
RoHS3 compliant (unverified).
60V.
500mA.
Maximum 3V at 1mA drain current.
5 Ohms maximum at 200mA drain current and 10V gate-source voltage.