BS170G

The BS170G is an N-channel enhancement mode MOSFET manufactured by On Semiconductor. It is designed for low-power switching and amplification applications. The device is rated for a maximum drain-source voltage of 60V and a continuous drain current of 500mA at 25°C ambient temperature. The maximum on-resistance is 5 Ohm at a drain current of 200mA and gate-source voltage of 10V. The gate threshold voltage is 3V maximum at 1mA drain current. The input capacitance is 60pF at 10V drain-source voltage, making it suitable for moderate speed switching.

The power dissipation is limited to 350mW at 25°C ambient, and the junction temperature range is -55°C to 150°C. The device is offered in a through-hole TO-226-3 / TO-92-3 Long Body package, with the supplier device package designated as TO-92 (TO-226). This package allows easy insertion into printed circuit boards and is common in general-purpose electronic designs.

Typical applications include low-voltage DC switching, load switching, relay drivers, and small-signal amplification. The BS170G is RoHS3 compliant and REACH unaffected, though these compliance claims are unverified in the available data. No datasheet or manufacturer page content was accessible for further verification. Pricing and availability should be obtained directly from distributors.