| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BS170-D27Z is a single N-Channel MOSFET from On Semiconductor designed for low-power switching applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current of 500mA at ambient temperature. The device offers a typical on-resistance of 5 Ohms at 200mA with a 10V gate drive, ensuring efficient switching in low-current circuits. The gate threshold voltage is 3V, making it compatible with logic-level control signals. The MOSFET is housed in a through-hole TO-92-3 package (also known as TO-226-3), which is suitable for manual assembly and prototyping. The operating junction temperature range of -55°C to 150°C allows use in a wide variety of environments. With an input capacitance of 40pF, the device is optimized for moderate-speed switching. The maximum power dissipation is 830mW, making it suitable for low-power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.74 | $0.74 |
| 10+ | $0.52 | $0.52 |
| 100+ | $0.33 | $0.33 |
| 500+ | $0.20 | $0.20 |
| 2,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
It comes in a through-hole TO-92-3 package (TO-226-3).
The junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but unverified.
500mA at ambient temperature.
Maximum 3V at 1mA drain current.
Maximum 5 Ohms at 200mA and 10V gate voltage.