| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,010 pcs
|
12010 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,800 pcs
|
10800 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BS170-D26Z is an N-Channel enhancement mode MOSFET designed for general-purpose switching and amplification applications. It is manufactured by ON Semiconductor and housed in a TO-92-3 through-hole package.
Key electrical specifications include a drain-source voltage rating of 60V, continuous drain current of 500mA, and a maximum on-resistance of 5 Ohms at 200mA gate drive. The gate threshold voltage is 3V maximum, and the device can be driven with up to ±20V on the gate. Input capacitance is 40pF at 10V drain-source voltage.
The MOSFET can dissipate up to 830mW of power and operates over a junction temperature range of -55°C to 150°C. The TO-92-3 package allows for through-hole mounting, suitable for prototyping and low-power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.42 | $0.42 |
| 500+ | $0.26 | $0.26 |
| 2,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
TO-92-3 through-hole package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
500 mA.
5 Ohm at 200mA, 10V.
3 V maximum at 1mA.