| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 2012+ROHS | On Request | On Request |
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The BS170 by FAI is an N-Channel Enhancement Mode Field Effect Transistor packaged in a TO-92 plastic case. This MOSFET is engineered for high-speed switching applications.
Key electrical characteristics include a drain-source breakdown voltage (VDSS) of 60V and a continuous drain current (ID) of up to 500mA at 25°C. The device features a low drain-source on-resistance (RDS(on)) of 5Ω at a gate-source voltage (VGS) of 10V and a drain current of 200mA. The gate-source threshold voltage (VGS(th)) typically ranges from 0.8V to 3.0V.
With a power dissipation (PD) of 0.83W at 25°C, the BS170 is suitable for various electronic designs. Its operating temperature range is from -55°C to 150°C.
The TO-92 package is ideal for through-hole mounting, making it convenient for breadboarding and production environments. This component is a reliable choice for designers needing efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the BS170 is 60V.
The continuous drain current (ID) for the BS170 is 500mA at 25°C.
The drain-source on-resistance (RDS(on)) of the BS170 is 5Ω when VGS is 10V and ID is 200mA.
The gate-source threshold voltage (VGS(th)) for the BS170 is typically between 0.8V and 3.0V.
The BS170 is available in a TO-92 plastic package.
The BS170 can operate within a storage temperature range of -55°C to 150°C and a junction temperature of up to 150°C.