| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
820 pcs
|
820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature |
The BS170 is an N-Channel Enhancement Mode Field Effect Transistor from SIL, housed in a TO-92 plastic package. This MOSFET is suitable for high-speed switching applications.
Key electrical characteristics include a drain-source breakdown voltage (VDSS) of 60V and a continuous drain current (ID) of up to 500mA at 25°C. The gate-source voltage (VGS) range is ±20V, and the gate-source threshold voltage (VGS(th)) is between 0.8V and 3.0V. The drain-source on-resistance (RDS(on)) is a maximum of 5Ω when VGS is 10V and ID is 200mA.
Capacitance values include input capacitance (Ciss) up to 40pF, output capacitance (Coss) up to 30pF, and reverse transfer capacitance (Crss) up to 10pF, all measured at 1MHz. Turn-on and turn-off delay times are both 10nS under specified test conditions.
Thermal specifications include a storage temperature range of -55°C to 150°C and a junction temperature range of -55°C to 150°C. The power dissipation (PD) is rated at 0.83W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is 60V.
The maximum continuous drain current (ID) is 500mA at 25°C.
The gate-source voltage (VGS) range is ±20V.
The gate-source threshold voltage (VGS(th)) is between 0.8V and 3.0V.
The maximum drain-source on-resistance (RDS(on)) is 5 Ohms.
The BS170 is available in a TO-92 plastic package.
The operating temperature range for junction temperature is -55°C to 150°C.