| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
280 pcs
|
280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
| Junction Temperature | |
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| Power Dissipation | |
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The BS170 from Philips is an N-Channel Enhancement Mode Field Effect Transistor suitable for high-speed switching applications. It features a drain-source voltage (VDSS) of up to 60V and a continuous drain current (ID) of 500mA at 25°C.
Key electrical characteristics include a gate-source threshold voltage (VGS(th)) typically between 0.8V and 3.0V, and a drain-source on-resistance (RDS(on)) of 5Ω at a gate-source voltage of 10V and drain current of 200mA. The transistor also exhibits input capacitance (Ciss) of 24pF to 40pF and output capacitance (Coss) of 17pF to 30pF.
Packaged in a standard TO-92 plastic package, the BS170 is designed for through-hole mounting. Its operating temperature range is from -55°C to 150°C, with a junction temperature also rated up to 150°C. The power dissipation (PD) is 0.83W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is 60V minimum at ID=100μA, VGS=0V.
The maximum drain current (ID) is 500mA at Tc=25°C.
The bs170 is available in a TO-92 through-hole package.
The junction temperature range is -55°C to 150°C.
The maximum drain-source on-resistance (RDS(on)) is 5Ω at VGS=10V, ID=200mA.
The gate-source threshold voltage (VGS(th)) is typically 1V, with a range of 0.8V to 3.0V at VDS=VGS, ID=1mA.
The typical input capacitance (Ciss) is 24pF at VDS=10V, VGS=0V, f=1MHz.