Mfr Part #:

BS170

Mfr Name: Osram

The BS170 is an N-Channel Enhancement Mode Field Effect Transistor from Osram, suitable for high-speed switching applications. It comes in a TO-92 package.

✓ Total Stock: 1,514 pcs

$ Price Range: $0.99

BS170 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Tomark Electronics Ltd ✓ Non-Authorised Inventory information	1,514 pcs On Request	1514 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BS170 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Osram
Junction Temperature	-55 to 150 ℃
Lead Spacing	2.54 mm
Lead Style	Through-Hole
Power Dissipation	0.83 W
Storage Temperature	-55 to 150 ℃

View Similar Products (0)

BS170 Description

Short technical summary and product information.

The BS170 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Osram, designed for high-speed switching applications. This component is housed in a standard TO-92 plastic package, making it suitable for through-hole mounting.

Key electrical characteristics include a drain-source breakdown voltage (VDSS) of 60V and a continuous drain current (ID) of up to 500mA at 25°C. The power dissipation (PD) is rated at 0.83W at 25°C. The drain-source on-resistance (RDS(on)) is a maximum of 5 Ohms when driven at VGS=10V and ID=200mA. The gate-source threshold voltage (VGS(th)) typically ranges from 0.8V to a maximum of 3.0V.

Capacitance values include input capacitance (Ciss) typically 24pF (max 40pF), output capacitance (Coss) typically 17pF (max 30pF), and reverse transfer capacitance (Crss) typically 7pF (max 10pF). Switching characteristics show a typical turn-on delay time (td(on)) and off delay time (td(off)) of 10nS under specified test conditions.

Thermal management is important, with a maximum junction temperature (Tj) and storage temperature (Tstg) of 150°C. The BS170 is a versatile MOSFET for various electronic designs requiring efficient switching.

BS170 Quick Information

Product Type: MOSFET Transistor

Canonical Name: BS170 N-Channel Enhancement Mode Field Effect Transistor

Subcategory: Single

BS170 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BS170 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BS170 Features

N-Channel Enhancement Mode MOSFET
60V Drain-Source Breakdown Voltage
500mA Continuous Drain Current
0.83W Power Dissipation
TO-92 Package for Through-Hole Mounting

BS170 Applications

Ideal for low-power load switching circuits.
Used in relay and solenoid driver designs.
Suitable for DC-DC converter switching stages.
Works in logic-level gate drive applications.

BS170 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the BS170?

The maximum drain-source voltage (VDSS) is 60V.

What package is the BS170 available in?

The BS170 is offered in a TO-92 through-hole package.

What is the operating temperature range of the BS170?

The junction and storage temperature range is -55°C to 150°C.

What is the maximum drain current of the BS170?

The maximum continuous drain current (ID) is 500mA at Tc=25°C.

What is the on-resistance of the BS170?

The maximum drain-source on-resistance (RDS(on)) is 5Ω at VGS=10V and ID=200mA.

What is the gate threshold voltage of the BS170?

The gate threshold voltage (VGS(th)) is typically 0.8V and maximum 3.0V at VDS=VGS and ID=1mA.

What are the switching times of the BS170?

Typical turn-on delay time (td(on)) and turn-off delay time (td(off)) are both 10ns under specified test conditions.