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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
93,221 pcs
|
93221 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,068 pcs
|
1068 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
55 pcs
|
55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Cutoff Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Current (Continuous) - Inverse Diode | |
| Forward Transconductance | |
| Forward Voltage Drop (Typ) - Inverse Diode | |
| Gate Body Leakage Current | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Turn Off Time | |
| Turn On Time | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The BS170 is an N-Channel enhancement mode MOSFET from On Semiconductor designed for low-power switching applications. It features a drain-source breakdown voltage of 60V minimum and 90V typical, with a continuous drain current rating of 300mA.
Key electrical characteristics include a maximum on-resistance of 5.0 Ohms at Vgs=10V and Id=200mA, gate threshold voltage range of 0.8V to 3.0V, and input capacitance of 60pF. The device offers fast switching with typical turn-on time of 5ns and turn-off time of 15ns.
The BS170 is packaged in a TO-92 through-hole package with formed leads, suitable for manual or automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 830mW.
This MOSFET is designed with high input impedance, CMOS logic compatible input, and no thermal runaway or secondary breakdown, making it suitable for interfacing with logic circuits and general-purpose switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
| 10+ | $0.28 | $0.28 |
| 100+ | $0.18 | $0.18 |
| 500+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum, 90V typical.
TO-92 through-hole package (TO-226-3).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
0.8V minimum, 1.0V typical, 3.0V maximum at Vgs=Vds, Id=1mA.
3.5 Ohm typical, 5.0 Ohm maximum at Vgs=10V, Id=200mA.
Turn-on time 5ns typical, turn-off time 15ns typical at Vgs=10V, Vds=10V, Rd=100 Ohm.