| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | 1411+PB | On Request | On Request |
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The ROHM Semiconductor BR25G256FVT-3GE2 is a 256Kbit serial EEPROM utilizing the SPI bus interface. It is designed for single power source operation from 1.6V to 5.5V, making it suitable for battery-powered applications.
Key features include a high clock speed of up to 20MHz, a wait function via the HOLDB terminal, and the ability to set parts or the whole memory array as read-only. The device supports page write operations up to 64 bytes and offers various write protection mechanisms, including power-on prohibition, command code prohibition, WPB pin control, and status register block setting.
With low current consumption during write (0.6mA typ.), read (2.0mA typ.), and standby (0.1µA typ.) modes, this EEPROM is energy-efficient. It boasts over 100 years of data retention and more than 1 million write cycles.
The BR25G256FVT-3GE2 is supplied in an 8-TSSOP package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BR25G256FVT-3GE2 has a memory size of 256 Kbit.
The BR25G256FVT-3GE2 uses an SPI interface.
The operating voltage range for the BR25G256FVT-3GE2 is 1.6 V to 5.5 V.
The maximum clock frequency for the BR25G256FVT-3GE2 is 20 MHz.
The operating temperature range is -40°C to 85°C.
The BR25G256FVT-3GE2 is supplied in an 8-TSSOP package.
The data retention period is over 100 years.