| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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307 pcs
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307 pcs | On Request | 1 | On Request | On Request | 1211+ | On Request | On Request |
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The Texas Instruments BQ4013YMA-85 is a 1,048,576-bit static RAM organized as 131,072 words by 8 bits. This non-volatile SRAM (NVSRAM) provides reliable data retention for at least 10 years without external power, thanks to its integral lithium energy source and control circuitry.
Key electrical specifications include an access time of 85 ns and a write cycle time of 85 ns. The device operates within a voltage range of 4.5V to 5.5V and is designed for parallel memory interface. It offers unlimited write cycles, distinguishing it from EEPROM technology.
The BQ4013YMA-85 is housed in a 32-pin DIP Module package and is designed for through-hole mounting. Its operating temperature range is 0°C to 70°C (TA). The integrated control circuitry automatically protects the SRAM during power-up and power-down cycles, preventing inadvertent data writes.
This component is suitable for applications requiring non-volatile data storage with the speed of SRAM. Its design eliminates the need for external circuitry for non-volatility, simplifying system integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BQ4013YMA-85 has a memory size of 1 Mbit.
The access time for the BQ4013YMA-85 is 85 ns.
The BQ4013YMA-85 operates within a voltage range of 4.5V to 5.5V.
The operating temperature range is 0°C to 70°C (TA).
The BQ4013YMA-85 is designed for through-hole mounting.
The BQ4013YMA-85 comes in a 32-DIP Module package.
The BQ4013YMA-85 provides data retention for at least 10 years without power.