| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The BQ4013YMA-70N from Texas Instruments is a 1,048,576-bit non-volatile static RAM organized as 131,072 words by 8 bits. It features a 70 ns access time and a write cycle time of 70 ns. The device operates within a voltage range of 4.5V to 5.5V and is suitable for applications requiring data retention for at least 10 years without power.
This NVSRAM is packaged in a 32-DIP Module with a through-hole mounting type. The operating temperature range is -40°C to 85°C (TA). The integral control circuitry and lithium energy source provide reliable non-volatility, automatically protecting memory contents during power-up and power-down cycles. It offers conventional SRAM operation with unlimited write cycles.
Key electrical characteristics include its 1Mbit memory size and parallel memory interface. The device is designed for applications where data integrity and non-volatility are critical, offering a robust solution for data storage needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BQ4013YMA-70N has a memory size of 1 Mbit.
The access time for the BQ4013YMA-70N is 70 ns.
The BQ4013YMA-70N operates within a voltage range of 4.5V to 5.5V.
The operating temperature range for the BQ4013YMA-70N is -40°C to 85°C (TA).
The BQ4013YMA-70N uses NVSRAM (Non-Volatile SRAM) technology.
The BQ4013YMA-70N is supplied in a 32-DIP Module package.
The BQ4013YMA-70N can retain data for at least 10 years without power.