| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
780 pcs
|
780 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The BQ4010YMA-85 from Texas Instruments is a 65,536-bit nonvolatile static RAM, organized as 8,192 words by 8 bits. This component provides reliable nonvolatility with unlimited write cycles, unlike traditional EEPROM. It operates conventionally as SRAM when power is within tolerance.
Key features include automatic write-protection during power-up/down cycles, ensuring data integrity. The device supports 5V or 3.3V operation and has an access time of 85 ns. It is housed in an industry-standard 28-pin DIP module package.
This NVSRAM is suitable for applications requiring data retention without the limitations of standard EEPROM write cycles. Its integral control circuitry and lithium energy source provide data retention for at least 10 years without external power.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BQ4010YMA-85 has a memory size of 64Kbit.
The memory organization is 8K x 8.
The BQ4010YMA-85 is a Non-Volatile SRAM.
The access time is 85 ns.
The operating voltage range is 4.5V to 5.5V.
The operating temperature range is 0°C to 70°C (TA).
The BQ4010YMA-85 is supplied in a 28-DIP Module package.