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BQ4010YMA-150 The BQ4010YMA-150 is a 64Kbit non-volatile SRAM from Texas Instruments, organized as 8K x 8 bits. It features automatic write protection during power cycles and data retention for at least 10 years.
Mfr Part #:

BQ4010YMA-150

Available from 2 distributors
Mfr Name: Texas Instruments
Texas Instruments
The BQ4010YMA-150 is a 64Kbit non-volatile SRAM from Texas Instruments, organized as 8K x 8 bits. It features automatic write protection during power cycles and data retention for at least 10 years.
✓ Total Stock: 410 pcs
$ Price Range: $1.28

BQ4010YMA-150 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
257 pcs
On Request
257 pcs On Request 1 On Request On Request 1006+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
153 pcs
On Request
153 pcs On Request 1 On Request On Request 1006+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BQ4010YMA-150 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Operating Voltage
SVHC Present
Supplier Device Package
Technology
Voltage
Write Cycle Time
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BQ4010YMA-150 Description

Short technical summary and product information.

The Texas Instruments BQ4010YMA-150 is a 65,536-bit static RAM organized as 8,192 words by 8 bits, functioning as a non-volatile SRAM. It operates with a supply voltage range of 4.5V to 5.5V and offers an access time of 150 ns. The device provides automatic write-protection during power-up and power-down cycles, ensuring data integrity.

 

This NVSRAM utilizes CMOS technology and includes an integral control circuitry and lithium energy source, providing reliable nonvolatility with unlimited write cycles. It is designed for conventional SRAM operation when power is within tolerance. The BQ4010YMA-150 is housed in a 28-pin DIP module package and supports through-hole mounting.

 

Key features include data retention for at least 10 years without external power and automatic write-protection during power transitions. The operating temperature range is 0°C to 70°C (TA). This component is compatible with the industry-standard 64-Kb SRAM pinout.

BQ4010YMA-150 Quick Information

Product Type: Non-Volatile SRAM
Canonical Name: BQ4010YMA-150 Non-Volatile SRAM
Subcategory: Memory

BQ4010YMA-150 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BQ4010YMA-150 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

BQ4010YMA-150 Features

  • 64Kbit non-volatile SRAM
  • 150ns access and write cycle times
  • Automatic write protection during power cycles
  • Data retention for at least 10 years
  • 28-DIP Module for through-hole mounting

BQ4010YMA-150 Applications

  • Reliable data storage applications
  • Systems requiring SRAM performance
  • Applications with power fluctuations
  • Long-term data retention needs

BQ4010YMA-150 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the BQ4010YMA-150?

The memory size is 64Kbit.

How is the memory organized in the BQ4010YMA-150?

The memory is organized as 8K x 8 bits.

What is the access time for the BQ4010YMA-150?

The access time is 150 ns.

What is the operating voltage range for this NVSRAM?

The operating voltage range is 4.5V to 5.5V.

What is the operating temperature range?

The operating temperature range is 0°C to 70°C (TA).

How is the BQ4010YMA-150 mounted?

It is mounted using the through-hole method.

What is the data retention capability of this non-volatile SRAM?

It offers data retention for at least 10 years without external power.

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