| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,436 pcs
|
2436 pcs | On Request | 1 | On Request | On Request | 1114+ | On Request | On Request | |
|
2,137 pcs
|
2137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BQ4010LYMA-70N from Texas Instruments is a 64,536-bit static RAM organized as 8,192 words by 8 bits. This non-volatile SRAM (NVSRAM) integrates control circuitry and a lithium energy source to provide reliable nonvolatility with unlimited write cycles, unlike traditional EEPROM. It operates conventionally as SRAM when power is within tolerance.
During power-down or power-up cycles, the device automatically write-protects the memory to prevent data corruption. It operates with a supply voltage range of 3V to 3.6V and offers an access time of 70 ns. The NVSRAM is housed in a 28-pin DIP module package suitable for through-hole mounting.
Key features include automatic write-protection during power transitions and data retention for at least 10 years without external power. The device is compatible with the industry-standard 64-Kb SRAM pinout, simplifying integration into existing designs. It operates within an ambient temperature range of -40°C to 85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 64Kbit.
The access time is 70 ns.
The operating voltage range is 3V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
It is in a 28-DIP Module package.
Yes, it features automatic write-protection during power-up/power-down cycles.
Data retention is for at least 10 years without power.